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Indium antimonide (InSb)

1. Physical character:

Atomic Weight: 236.578

Energy gap: 0.17eV

Density: 5.78g/cm3

Melting Point: 525℃

2. Process:

single crystal growth with Czochralski method

3. Purity:

6N(99.9999%)

4. Analysis:

GDMS (All impurity elements is below 1ppm.)

5. Application:

magnetic resistance sensor, thermal imaging cameras

[출처] Indium antimonide (InSb)|작성자 IT케미칼