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CIGS (1:0.7:0.3:2)

Providing a variety of targets used for CIGS thin-film panel

1. CIGS Target

   1) Compound: atomic ratio: 1:0.7:0.3:2 (customized proportion available)

   2) Process: Hot process and cold process / sintering

   3) Purity: 99.99% above

   4) Analysis: ICP-MS; XRD;

ICP-MS: the totals of impurity elements is below 10ppm

XRD: CIGS has chalcopyrite structure

   5) Density: 93% above

2. Selenide Targets:

In2Se3, Ga2Se3, Cu2Se, CuSe target

3. Alloy Targets:

CuGa, CuIn, CuInGa target

4. Metal target:

Cu, In, Se

5. Other target:

CdS, ZnS, ZnSe, AZO, Mo: bellow 1ppm

[출처] CIGS (1:0.7:0.3:2)|작성자 IT케미칼